Harris Corporation IRFD9113

Product attributes

Attribute value

Manufacturer:

Harris Corporation

Series:

-

Package/Case:

4-DIP (0.300", 7.62mm)

Packaging:

Bulk

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

600mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

1.6Ohm @ 300mA, 10V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

15 nC @ 15 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

250 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

4-DIP, Hexdip, HVMDIP