Infineon Technologies IRF9333PBF

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tube

Product Status:

Discontinued at Digi-Key

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

9.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

19.4mOhm @ 9.2A, 10V

Vgs(th) (Max) @ Id:

2.4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:

38 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1110 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO