Infineon Technologies IRF7202TR

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

250mOhm @ 1A, 10V

Vgs(th) (Max) @ Id:

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

15 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

270 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

1.6W (Ta), 2.5W (Tc)

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SO