Infineon Technologies IRF6645

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

DirectFET™ Isometric SJ

Packaging:

Tube

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

5.7A (Ta), 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

35mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id:

4.9V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

20 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

890 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

3W (Ta), 42W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DIRECTFET™ SJ