Infineon Technologies IPP65R310CFDAAKSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

CoolMOS™

Package/Case:

TO-220-3

Packaging:

Tube

Product Status:

Not For New Designs

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

11.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

310mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:

41 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1110 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

104.2W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Through Hole

Supplier Device Package:

PG-TO220-3