Infineon Technologies IPG20N04S408BATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™ T2

Package/Case:

8-PowerVDFN

Packaging:

Tape & Reel (TR)

Product Status:

Last Time Buy

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual)

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

20A (Tc)

Rds On (Max) @ Id, Vgs:

7.6mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:

4V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:

36nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

2940pF @ 25V

Power - Max:

65W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount, Wettable Flank

Supplier Device Package:

PG-TDSON-8-10