Infineon Technologies IPD50R650CEBTMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

CoolMOS™ CE

Package/Case:

TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:

Tape & Reel (TR)

Product Status:

Discontinued at Digi-Key

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

500 V

Current - Continuous Drain (Id) @ 25°C:

6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

13V

Rds On (Max) @ Id, Vgs:

650mOhm @ 1.8A, 13V

Vgs(th) (Max) @ Id:

3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:

15 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

342 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

47W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO252-3