Infineon Technologies IPC020N10L3X1SA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™

Package/Case:

Die

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

1A (Tj)

Drive Voltage (Max Rds On, Min Rds On):

4.5V

Rds On (Max) @ Id, Vgs:

100mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:

2.1V @ 12µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

Sawn on foil