Infineon Technologies IPB65R190CFDAATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

CoolMOS™

Package/Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

17.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

190mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:

68 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1850 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

151W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-3