Infineon Technologies IPB160N04S3H2ATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™

Package/Case:

TO-263-7, D2PAK (6 Leads + Tab)

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

2.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:

145 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

9600 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

214W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-7-3