Infineon Technologies IPB110N06L G

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

-

Package/Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:

Cut Tape (CT)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

78A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

11mOhm @ 78A, 10V

Vgs(th) (Max) @ Id:

2V @ 94µA

Gate Charge (Qg) (Max) @ Vgs:

79 nC @ 10 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

2700 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TO263-3-2