Infineon Technologies IGLD65R055D2AUMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

CoolGaN™

Package/Case:

8-LDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

1.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:

6.6 nC @ 3 V

Vgs (Max):

-10V

Input Capacitance (Ciss) (Max) @ Vds:

330 pF @ 400 V

FET Feature:

-

Power Dissipation (Max):

89W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-LSON-8-1