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Infineon Technologies IDK10G120C5XTMA1

Part No.:
IDK10G120C5XTMA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description:
DIODE SIC 1.2KV 31.9A TO263-1
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IDK10G120C5XTMA1 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
31.9A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
18 µA @ 1200 V
Capacitance @ Vr, F:
525pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-2-1
Operating Temperature - Junction:
-55°C ~ 175°C
Image IDK10G120C5XTMA1
Part Number IDK10G120C5XTMA1
Manufacturer Infineon Technologies
Series CoolSiC™+
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 31.9A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) -
Current - Reverse Leakage @ Vr 18 µA @ 1200 V
Capacitance @ Vr, F 525pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-2-1
Operating Temperature - Junction -55°C ~ 175°C
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