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Infineon Technologies IDK04G65C5XTMA2

Part No.:
IDK04G65C5XTMA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description:
DIODE SIL CARB 650V 4A TO263-2
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Unit Price:$0

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IDK04G65C5XTMA2 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
4A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 4 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
670 µA @ 650 V
Capacitance @ Vr, F:
130pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-2
Operating Temperature - Junction:
-55°C ~ 175°C
Image IDK04G65C5XTMA2
Part Number IDK04G65C5XTMA2
Manufacturer Infineon Technologies
Series CoolSiC™+
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 4 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 670 µA @ 650 V
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-2
Operating Temperature - Junction -55°C ~ 175°C
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