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Infineon Technologies IDH10G65C5XKSA2

Part No.:
IDH10G65C5XKSA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-220-2
Description:
DIODE SIL CARB 650V 10A TO220-1
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Unit Price:$0

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IDH10G65C5XKSA2 Information

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Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
180 µA @ 650 V
Capacitance @ Vr, F:
300pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-2-1
Operating Temperature - Junction:
-55°C ~ 175°C
Image IDH10G65C5XKSA2
Part Number IDH10G65C5XKSA2
Manufacturer Infineon Technologies
Series CoolSiC™+
Package/Case TO-220-2
Packaging Tube
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 180 µA @ 650 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO220-2-1
Operating Temperature - Junction -55°C ~ 175°C
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