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Infineon Technologies IDH04G65C6XKSA1

Part No.:
IDH04G65C6XKSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-220-2
Description:
DIODE SIL CARB 650V 12A TO220-2
Quantity:

Unit Price:$0

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IDH04G65C6XKSA1 Information

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Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
12A
Voltage - Forward (Vf) (Max) @ If:
1.35 V @ 4 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
14 µA @ 420 V
Capacitance @ Vr, F:
205pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-2
Operating Temperature - Junction:
-55°C ~ 175°C
Image IDH04G65C6XKSA1
Part Number IDH04G65C6XKSA1
Manufacturer Infineon Technologies
Series -
Package/Case TO-220-2
Packaging Tube
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 4 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 14 µA @ 420 V
Capacitance @ Vr, F 205pF @ 1V, 1MHz
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO220-2
Operating Temperature - Junction -55°C ~ 175°C
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