Infineon Technologies IAUC45N04S6L063HATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™

Package/Case:

8-PowerVDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

Logic Level Gate

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

45A (Tj)

Rds On (Max) @ Id, Vgs:

6.3mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:

2V @ 9µA

Gate Charge (Qg) (Max) @ Vgs:

13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

775pF @ 25V

Power - Max:

41W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TDSON-8-57