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Taiwan Semiconductor Corporation HS1JL M2G

Part No.:
HS1JL M2G
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single Diodes
Package:
DO-219AB
Description:
DIODE GEN PURP 600V 1A SUB SMA
Quantity:

Unit Price:$0

Ext Price:$0

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HS1JL M2G Information

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Attribute value
Manufacturer:
Taiwan Semiconductor Corporation
Series:
-
Package/Case:
DO-219AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 1 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
75 ns
Current - Reverse Leakage @ Vr:
5 µA @ 600 V
Capacitance @ Vr, F:
15pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
Sub SMA
Operating Temperature - Junction:
-55°C ~ 150°C
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