Rohm Semiconductor HP8ME5TB1

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)

Rds On (Max) @ Id, Vgs:

193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

2.9nC @ 10V, 19.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

90pF @ 50V, 590pF @ 50V

Power - Max:

3W (Ta), 20W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-HSOP