Renesas Electronics Corporation HAT2218R-EL-E

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Bulk

Product Status:

Obsolete

Technology:

MOSFET (Metal Oxide)

Configuration:

2 N-Channel (Dual) Asymmetrical

FET Feature:

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

7.5A, 8A

Rds On (Max) @ Id, Vgs:

24mOhm @ 3.75A, 10V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

4.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:

630pF @ 10V

Power - Max:

1.5W

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP