Renesas Electronics Corporation HAT2201WP-EL-E

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

8-PowerWDFN

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

43mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

21 nC @ 10 V

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

1450 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-WPAK