Renesas Electronics Corporation H7N1002LSTL-E

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

SC-83

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

75A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

10mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

155 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

9700 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

100W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

LDPAK