Toshiba Semiconductor and Storage GT50N322A

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-3P-3, SC-65-3

Packaging:

Tray

Product Status:

Active

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

1000 V

Current - Collector (Ic) (Max):

50 A

Current - Collector Pulsed (Icm):

120 A

Vce(on) (Max) @ Vge, Ic:

2.8V @ 15V, 60A

Power - Max:

156 W

Switching Energy:

-

Input Type:

Standard

Gate Charge:

-

Td (on/off) @ 25°C:

-

Test Condition:

-

Reverse Recovery Time (trr):

800 ns

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P(N)