Toshiba Semiconductor and Storage GT40QR21(STA1,E,D

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-3P-3, SC-65-3

Packaging:

Tube

Product Status:

Active

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

1200 V

Current - Collector (Ic) (Max):

40 A

Current - Collector Pulsed (Icm):

80 A

Vce(on) (Max) @ Vge, Ic:

2.7V @ 15V, 40A

Power - Max:

230 W

Switching Energy:

-, 290µJ (off)

Input Type:

Standard

Gate Charge:

-

Td (on/off) @ 25°C:

-

Test Condition:

280V, 40A, 10Ohm, 20V

Reverse Recovery Time (trr):

600 ns

Operating Temperature:

175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P(N)