Toshiba Semiconductor and Storage GT30N135SRA,S1E

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Active

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

1350 V

Current - Collector (Ic) (Max):

60 A

Current - Collector Pulsed (Icm):

120 A

Vce(on) (Max) @ Vge, Ic:

2.6V @ 15V, 60A

Power - Max:

348 W

Switching Energy:

-, 1.3mJ (off)

Input Type:

Standard

Gate Charge:

270 nC

Td (on/off) @ 25°C:

-

Test Condition:

300V, 60A, 39Ohm, 15V

Reverse Recovery Time (trr):

-

Operating Temperature:

175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247