Toshiba Semiconductor and Storage GT30J65MRB,S1E

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-3P-3, SC-65-3

Packaging:

Tube

Product Status:

Active

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

650 V

Current - Collector (Ic) (Max):

60 A

Current - Collector Pulsed (Icm):

-

Vce(on) (Max) @ Vge, Ic:

1.8V @ 15V, 30A

Power - Max:

200 W

Switching Energy:

1.4mJ (on), 220µJ (off)

Input Type:

Standard

Gate Charge:

70 nC

Td (on/off) @ 25°C:

75ns/400ns

Test Condition:

400V, 15A, 56Ohm, 15V

Reverse Recovery Time (trr):

200 ns

Operating Temperature:

175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P(N)