Toshiba Semiconductor and Storage GT30J341,Q

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-3P-3, SC-65-3

Packaging:

Tray

Product Status:

Last Time Buy

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

600 V

Current - Collector (Ic) (Max):

59 A

Current - Collector Pulsed (Icm):

120 A

Vce(on) (Max) @ Vge, Ic:

2V @ 15V, 30A

Power - Max:

230 W

Switching Energy:

800µJ (on), 600µJ (off)

Input Type:

Standard

Gate Charge:

-

Td (on/off) @ 25°C:

80ns/280ns

Test Condition:

300V, 30A, 24Ohm, 15V

Reverse Recovery Time (trr):

50 ns

Operating Temperature:

175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P(N)