Toshiba Semiconductor and Storage GT20J341,S4X(S

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-220-3 Full Pack

Packaging:

Tube

Product Status:

Active

IGBT Type:

-

Voltage - Collector Emitter Breakdown (Max):

600 V

Current - Collector (Ic) (Max):

20 A

Current - Collector Pulsed (Icm):

80 A

Vce(on) (Max) @ Vge, Ic:

2V @ 15V, 20A

Power - Max:

45 W

Switching Energy:

500µJ (on), 400µJ (off)

Input Type:

Standard

Gate Charge:

-

Td (on/off) @ 25°C:

60ns/240ns

Test Condition:

300V, 20A, 33Ohm, 15V

Reverse Recovery Time (trr):

90 ns

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220SIS