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Goford Semiconductor GT110N06S

Part No.:
GT110N06S
Manufacturer:
Goford Semiconductor
Category:
Single FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Description:
N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
Quantity:

Unit Price:$0

Ext Price:$0

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GT110N06S Information

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Manufacturer:
Goford Semiconductor
Series:
SGT
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Cut Tape (CT)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP
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