Infineon Technologies Canada Inc. GS61008P-MR

Product attributes

Attribute value

Manufacturer:

Infineon Technologies Canada Inc.

Series:

-

Package/Case:

5-SMD, No Lead

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V

Rds On (Max) @ Id, Vgs:

9.5mOhm @ 27A, 6V

Vgs(th) (Max) @ Id:

2.6V @ 7mA

Gate Charge (Qg) (Max) @ Vgs:

8 nC @ 6 V

Vgs (Max):

+7V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

600 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-55°C ~ 150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

-