SemiQ GCMX005A120B3B1P

Product attributes

Attribute value

Manufacturer:

SemiQ

Series:

-

Package/Case:

Module

Packaging:

Tray

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

4 N-Channel (Half Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

383A (Tc)

Rds On (Max) @ Id, Vgs:

7mOhm @ 200A, 20V

Vgs(th) (Max) @ Id:

4V @ 80mA

Gate Charge (Qg) (Max) @ Vgs:

927nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds:

23500pF @ 800V

Power - Max:

1.154kW (Tc)

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

-