Goford Semiconductor G4616

Product attributes

Attribute value

Manufacturer:

Goford Semiconductor

Series:

TrenchFET®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Cut Tape (CT)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

N and P-Channel Complementary

FET Feature:

-

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

8A (Tc), 7A (Tc)

Rds On (Max) @ Id, Vgs:

20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

12nC @ 10V, 13nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

415pF @ 20V, 520pF @ 20V

Power - Max:

2W (Tc), 2.8W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP