GeneSiC Semiconductor G2R1000MT33J

Product attributes

Attribute value

Manufacturer:

GeneSiC Semiconductor

Series:

G2R™

Package/Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

3300 V

Current - Continuous Drain (Id) @ 25°C:

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

1.2Ohm @ 2A, 20V

Vgs(th) (Max) @ Id:

3.5V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:

21 nC @ 20 V

Vgs (Max):

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

238 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

74W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263-7