Goford Semiconductor G2K2P10S2E

Product attributes

Attribute value

Manufacturer:

Goford Semiconductor

Series:

TrenchFET®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Tape & Reel (TR)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

-

FET Feature:

-

Drain to Source Voltage (Vdss):

100V

Current - Continuous Drain (Id) @ 25°C:

3.5A (Tc)

Rds On (Max) @ Id, Vgs:

200mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

1623pF @ 50V

Power - Max:

3.1W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP