Goford Semiconductor G1K8P06S2

Product attributes

Attribute value

Manufacturer:

Goford Semiconductor

Series:

TrenchFET®

Package/Case:

8-SOIC (0.154", 3.90mm Width)

Packaging:

Cut Tape (CT)

Product Status:

Active

Technology:

MOSFET (Metal Oxide)

Configuration:

2 P-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

3.2A (Tc)

Rds On (Max) @ Id, Vgs:

170mOhm @ 1A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

11.3nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:

594pF @ 30V

Power - Max:

2W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP