Goford Semiconductor G085P02TS

Product attributes

Attribute value

Manufacturer:

Goford Semiconductor

Series:

-

Package/Case:

8-TSSOP (0.173", 4.40mm Width)

Packaging:

Cut Tape (CT)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

1.8V, 4.5V

Rds On (Max) @ Id, Vgs:

8.5mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id:

900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

29 nC @ 10 V

Vgs (Max):

±8V

Input Capacitance (Ciss) (Max) @ Vds:

1255 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1.05W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-TSSOP