Goford Semiconductor G080N10M

Product attributes

Attribute value

Manufacturer:

Goford Semiconductor

Series:

-

Package/Case:

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:

Cut Tape (CT)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

7.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

107 nC @ 4.5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

13950 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

370W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

TO-263