Infineon Technologies FS13MR12W2M1HB70BPSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

CoolSiC™

Package/Case:

-

Packaging:

Tray

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

6 N-Channel (3-Phase Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

62.5A (Tc)

Rds On (Max) @ Id, Vgs:

11.7mOhm @ 62.5A, 18V

Vgs(th) (Max) @ Id:

5.15V @ 28mA

Gate Charge (Qg) (Max) @ Vgs:

200nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:

6050pF @ 800V

Power - Max:

-

Operating Temperature:

-

Grade:

-

Qualification:

-

Mounting Type:

-

Supplier Device Package:

-