Infineon Technologies FS02MR12A8MA2BBPSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HybridPACK™

Package/Case:

Module

Packaging:

Tray

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

6 N-Channel

FET Feature:

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

390A (Tj)

Rds On (Max) @ Id, Vgs:

1.9mOhm @ 390A, 18V

Vgs(th) (Max) @ Id:

4.55V @ 160mA

Gate Charge (Qg) (Max) @ Vgs:

1.19µC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:

34500pF @ 750V

Power - Max:

-

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

-