Infineon Technologies FF4MR20KM1HHPSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

C

Package/Case:

Module

Packaging:

Tray

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

2 N-Channel

FET Feature:

-

Drain to Source Voltage (Vdss):

2000V (2kV)

Current - Continuous Drain (Id) @ 25°C:

280A (Tc)

Rds On (Max) @ Id, Vgs:

5.3mOhm @ 300A, 18V

Vgs(th) (Max) @ Id:

5.15V @ 168mA

Gate Charge (Qg) (Max) @ Vgs:

1170nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:

36100pF @ 1.2kV

Power - Max:

-

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

AG-62MMHB