Infineon Technologies FF200R12KT3EHOSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

C

Package/Case:

Module

Packaging:

Bulk

Product Status:

Not For New Designs

IGBT Type:

-

Configuration:

2 Independent

Voltage - Collector Emitter Breakdown (Max):

1200 V

Current - Collector (Ic) (Max):

-

Power - Max:

1050 W

Vce(on) (Max) @ Vge, Ic:

2.15V @ 15V, 200A

Current - Collector Cutoff (Max):

5 mA

Input Capacitance (Cies) @ Vce:

14 nF @ 25 V

Input:

Standard

NTC Thermistor:

No

Operating Temperature:

-40°C ~ 125°C

Mounting Type:

Chassis Mount

Supplier Device Package:

Module