Infineon Technologies F3L25R12W1T4B27BOMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

-

Package/Case:

Module

Packaging:

Tray

Product Status:

Active

IGBT Type:

-

Configuration:

Half Bridge

Voltage - Collector Emitter Breakdown (Max):

1200 V

Current - Collector (Ic) (Max):

45 A

Power - Max:

215 W

Vce(on) (Max) @ Vge, Ic:

2.25V @ 15V, 25A

Current - Collector Cutoff (Max):

1 mA

Input Capacitance (Cies) @ Vce:

1.45 nF @ 25 V

Input:

Standard

NTC Thermistor:

Yes

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Chassis Mount

Supplier Device Package:

AG-EASY1B