Infineon Technologies FF17MR12W1M1HB17BPSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

CoolSiC™

Package/Case:

Module

Packaging:

Tray

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

50A (Tj)

Rds On (Max) @ Id, Vgs:

16.2mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:

5.15V @ 20mA

Gate Charge (Qg) (Max) @ Vgs:

149nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:

4400pF @ 800V

Power - Max:

20mW

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

AG-EASY1B