EPC Space, LLC FBG10N05ASH

Product attributes

Attribute value

Manufacturer:

EPC Space, LLC

Series:

eGaN®

Package/Case:

4-SMD, No Lead

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V

Rds On (Max) @ Id, Vgs:

45mOhm @ 5A, 5V

Vgs(th) (Max) @ Id:

2.5V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs:

2.2 nC @ 5 V

Vgs (Max):

+6V, -4V

Input Capacitance (Ciss) (Max) @ Vds:

233 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

4-SMD