Infineon Technologies F3L6MR20W2M1HB70BPSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

EasyPACK™

Package/Case:

Module

Packaging:

Tray

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

4 N-Channel

FET Feature:

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss):

2000V (2kV)

Current - Continuous Drain (Id) @ 25°C:

155A (Tj)

Rds On (Max) @ Id, Vgs:

8.7mOhm @ 100A, 18V

Vgs(th) (Max) @ Id:

5.15V @ 112mA

Gate Charge (Qg) (Max) @ Vgs:

297nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:

24100pF @ 1.2kV

Power - Max:

-

Operating Temperature:

-40°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

-