Rohm Semiconductor ES6U1T2R

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

6-SMD, Flat Leads

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

12 V

Current - Continuous Drain (Id) @ 25°C:

1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

1.5V, 4.5V

Rds On (Max) @ Id, Vgs:

260mOhm @ 1.3A, 4.5V

Vgs(th) (Max) @ Id:

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

2.4 nC @ 4.5 V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

290 pF @ 6 V

FET Feature:

Schottky Diode (Isolated)

Power Dissipation (Max):

700mW (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-WEMT