EPC EPC2012

Product attributes

Attribute value

Manufacturer:

EPC

Series:

eGaN®

Package/Case:

Die

Packaging:

Tape & Reel (TR)

Product Status:

Discontinued at Digi-Key

FET Type:

N-Channel

Technology:

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):

200 V

Current - Continuous Drain (Id) @ 25°C:

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

5V

Rds On (Max) @ Id, Vgs:

100mOhm @ 3A, 5V

Vgs(th) (Max) @ Id:

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

1.8 nC @ 5 V

Vgs (Max):

+6V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

145 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-40°C ~ 125°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

Die