onsemi DTD113E

Product attributes

Attribute value

Manufacturer:

onsemi

Series:

-

Package/Case:

TO-226-3, TO-92-3 (TO-226AA)

Packaging:

Bulk

Product Status:

Active

Transistor Type:

NPN - Pre-Biased

Current - Collector (Ic) (Max):

100 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

1 kOhms

Resistor - Emitter Base (R2):

1 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

3 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic:

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max):

500nA

Frequency - Transition:

-

Power - Max:

350 mW

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-92 (TO-226)