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Diodes Incorporated DMG4N60SJ3

Part No.:
DMG4N60SJ3
Manufacturer:
Diodes Incorporated
Category:
Single FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Description:
MOSFET N-CH 600V 3A TO251
Quantity:

Unit Price:$0

Ext Price:$0

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DMG4N60SJ3 Information

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Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14.3 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
532 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
41W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251
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