Diotec Semiconductor DIW170SIC049

Product attributes

Attribute value

Manufacturer:

Diotec Semiconductor

Series:

-

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1700 V

Current - Continuous Drain (Id) @ 25°C:

67A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

49mOhm @ 40A, 18V

Vgs(th) (Max) @ Id:

4V @ 15mA

Gate Charge (Qg) (Max) @ Vgs:

179 nC @ 18 V

Vgs (Max):

+18V, -4V

Input Capacitance (Ciss) (Max) @ Vds:

3046 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

357W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247